Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2011-03-29

2011-03-29

Fulk, Steven J (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S592000, C257S329000, C257SE21410

Reexamination Certificate

active

07915130

ABSTRACT:
This disclosure concerns a manufacturing method of a semiconductor device includes forming a Fin-type body on an insulation layer, the Fin-type body being made of a semiconductor material and having an upper surface covered with a protective film; forming a gate insulation film on side surfaces of the Fin-type body; depositing a gate electrode material so as to cover the Fin-type body; planarizing the gate electrode material; forming a gate electrode by processing the gate electrode material; depositing an interlayer insulation film so as to cover the gate electrode; exposing the upper surface of the gate electrode; depositing a metal layer on the upper surface of the gate electrode; siliciding the gate electrode by reacting the gate electrode with the metal layer; forming a trench on the upper surface of the protective film by removing an unreacted metal in the metal layer; and filling the trench with a conductor.

REFERENCES:
patent: 6846734 (2005-01-01), Amos et al.
patent: 2004/0094807 (2004-05-01), Chau et al.
patent: 2004/0142524 (2004-07-01), Grupp et al.
patent: 2005/0104096 (2005-05-01), Lee et al.
patent: 2005/0136605 (2005-06-01), Murto et al.
patent: 2005/0199963 (2005-09-01), Aoyama
patent: 2005/0258477 (2005-11-01), Saito
patent: 2006/0071275 (2006-04-01), Brask et al.
Kedzierski, J. et al., “Fabrication of Metal Gated FinFETs Through Complete Gate Silicidation With Ni,” IEEE Transactions on Electron Devices, vol. 51, No. 12, pp. 2115-2120, (Dec. 2004).

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2680606