Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2011-07-05
2011-07-05
Wagner, Jenny L. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257SE27131, C250S214100
Reexamination Certificate
active
07973380
ABSTRACT:
A method of providing metal extension in a backside illuminated image sensor is provided in the present disclosure. In one embodiment, a first set of pads and a second set of pads, and a metal layer are provided in a backside illuminated image sensor. The first set of pads are electrically coupled to the second set of pads through the metal layer, and a pad in the second set of pads is exposed to the surface of the backside illuminated image sensor for testing. In an alternative embodiment, a first set of pads, at least one second pad directly positioned over the first set of pads are provided in a backside illuminated image sensor. The first set of pads are electrically coupled to the at least one second pad and the at least one second pad is exposed to the surface of the backside illuminated image sensor for testing.
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Hsu Tzu-Hsuan
Yaung Dun-Nian
Haynes and Boone LLP
Taiwan Semiconductor Manufacturing Company , Ltd.
Wagner Jenny L.
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