Method of fabricating a flash memory device

Details Method of fabricating a flash memory device Method of fabricating a flash memory device

2011-04-05

2011-04-05

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S314000, C257SE21691, C257SE21683

Reexamination Certificate

active

07919369

ABSTRACT:
In a method of fabricating a flash memory device, a lower capping conductive layer of a peri region is patterned. A step formed between a cell gate and a gate for a peri region transistor is decreased by controlling a target etch thickness of a hard mask. Thus, an impurity does not infiltrate into the bottom of the gate for the peri region transistor through a lost portion of a SAC nitride layer. Accordingly, a hump phenomenon of the transistor formed in the peri region can be improved. Furthermore, a leakage current characteristic of the transistor formed in the peri region can be improved.

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