Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-04-26
2011-04-26
Pert, Evan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29262, C438S270000
Reexamination Certificate
active
07932556
ABSTRACT:
A field effect transistor (FET) includes body regions of a first conductivity type over a semiconductor region of a second conductivity type. Source regions of the second conductivity type extend over the body regions. Gate electrodes extend adjacent to but are insulated from the body regions by a gate dielectric layer. Contact openings extend into the body regions between adjacent gate electrodes. A seed layer extends along the bottom of each contact opening. The seed layer serves as a nucleation site for promoting growth of conductive fill material. A conductive fill material fills a lower portion of each contact opening. An interconnect layer fills an upper portion of each contact opening and is in direct contact with the conductive fill material. The interconnect layer is also in direct contact with corresponding source regions along upper sidewalls of the contact openings.
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Fairchild Semiconductor Corporation
Kilpatrick Townsend & Stockton LLP
Pert Evan
Reames Matthew
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