Method for manufacturing capacitor of semiconductor device

Details Method for manufacturing capacitor of semiconductor device Method for manufacturing capacitor of semiconductor device

2011-01-25

2011-01-25

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S381000, C438S513000, C438S637000, C438S706000, C438S745000, C257SE21170, C257SE21229, C257SE21231, C257SE21259, C257SE21267, C257SE21319, C257SE21646, C257SE21648

Reexamination Certificate

active

07875515

ABSTRACT:
A method for manufacturing a capacitor of a semiconductor device includes: forming an interlayer insulating film including a contact plug over a semiconductor substrate; forming a first stack film including a capacitor oxide film and a nitride film over the interlayer insulating film; etching the first stack film to form a first stack pattern and a contact hole that exposes the contact plug; forming a lower electrode in the contact hole; forming a capping oxide film continuously over the first stack pattern to form a bridge connecting the neighboring first stack patterns; forming an etching barrier film including cavities over the capping oxide film; performing a blanket etching process onto the etching barrier film including cavities until the capacitor oxide film is exposed to form a nitride film pattern; and removing the exposed capacitor oxide film.

REFERENCES:
patent: 5401681 (1995-03-01), Dennison
patent: 5795806 (1998-08-01), Tseng
patent: 5960280 (1999-09-01), Jenq et al.
patent: 6030867 (2000-02-01), Chien et al.
patent: 6159788 (2000-12-01), Jenq et al.
patent: 10-2000-0034608 (2000-06-01), None
patent: 10-2004-0059803 (2004-07-01), None
patent: 10-2005-0019301 (2005-03-01), None
patent: 10-2007-0051216 (2007-05-01), None

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