Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-04-26
2011-04-26
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S239000, C438S240000, C438S241000, C438S242000, C438S238000, C438S152000, C438S153000, C257SE31029, C257S003000, C257S004000, C257S005000, C257S394000
Reexamination Certificate
active
07932167
ABSTRACT:
A memory cell in an integrated circuit is fabricated in part by forming a lower electrode feature, an island, a sacrificial feature, a gate feature, and a phase change feature. The island is formed on the lower electrode feature and has one or more sidewalls. It comprises a lower doped feature, a middle doped feature formed above the lower doped feature, and an upper doped feature formed above the middle doped feature. The sacrificial feature is formed above the island, while the gate feature is formed along each sidewall of the island. The gate feature overlies at least a portion of the middle doped feature of the island and is operative to control an electrical resistance therein. Finally, the phase feature is formed above the island at least in part by replacing at least a portion of the sacrificial feature with a phase change material. The phase change material is operative to switch between lower and higher electrical resistance states in response to an application of an electrical signal.
REFERENCES:
patent: 5874760 (1999-02-01), Burns, Jr. et al.
patent: 5985698 (1999-11-01), Gonzalez et al.
patent: 6153890 (2000-11-01), Wolstenholme et al.
patent: 6236059 (2001-05-01), Wolstenholme et al.
patent: 6326275 (2001-12-01), Harrington et al.
patent: 6420215 (2002-07-01), Knall et al.
patent: 6420725 (2002-07-01), Harshfield
patent: 6605527 (2003-08-01), Dennison et al.
patent: 6764894 (2004-07-01), Lowrey
patent: 6790733 (2004-09-01), Natzle et al.
patent: 6946704 (2005-09-01), Matsuoka et al.
patent: 7324372 (2008-01-01), Hanzawa et al.
patent: 7399655 (2008-07-01), Dennison
patent: 7442603 (2008-10-01), Lai et al.
patent: 7442663 (2008-10-01), Tomita
patent: 7463512 (2008-12-01), Lung
patent: 7485487 (2009-02-01), Breitwisch et al.
patent: 7511297 (2009-03-01), Jang et al.
patent: 7842536 (2010-11-01), Lung
patent: 2002/0070379 (2002-06-01), Dennison
patent: 2004/0179388 (2004-09-01), Matsuoka et al.
patent: 2004/0262635 (2004-12-01), Lee
patent: 2005/0093022 (2005-05-01), Lung
patent: 2005/0212024 (2005-09-01), Happ
patent: 2006/0110877 (2006-05-01), Park et al.
patent: 2006/0138473 (2006-06-01), Kawagoe et al.
patent: 2006/0148135 (2006-07-01), Matsuoka et al.
patent: 2006/0152961 (2006-07-01), Kim et al.
patent: 2006/0157683 (2006-07-01), Scheuerlein
patent: 2006/0273298 (2006-12-01), Petti
patent: 2007/0057323 (2007-03-01), Furukawa et al.
patent: 2007/0131980 (2007-06-01), Lung
patent: 2007/0176261 (2007-08-01), Lung
patent: 2007/0246748 (2007-10-01), Breitwisch et al.
patent: 2007/0257300 (2007-11-01), Ho et al.
patent: 2007/0278529 (2007-12-01), Lai et al.
patent: 2008/0061341 (2008-03-01), Lung
patent: 2008/0121861 (2008-05-01), Lai et al.
patent: 2008/0164453 (2008-07-01), Breitwisch et al.
patent: 2008/0185571 (2008-08-01), Happ et al.
patent: 2008/0203469 (2008-08-01), Gruening-von Schwerin
patent: 2008/0205118 (2008-08-01), Gruening-von Schwerin et al.
patent: 2009/0072216 (2009-03-01), Lung et al.
patent: 2009/0200536 (2009-08-01), Van Schaijk et al.
Furukawa Toshiharu
Gaudiello John G.
Hakey Mark Charles
Holmes Steven J.
Horak David V.
International Business Machines - Corporation
Richards N Drew
Ryan & Mason & Lewis, LLP
Singal Ankush k
Vazken Alexanian
LandOfFree
Phase change memory cell with vertical transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Phase change memory cell with vertical transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Phase change memory cell with vertical transistor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2673194