Methods of fabricating semiconductor devices including...

Details Methods of fabricating semiconductor devices including... Methods of fabricating semiconductor devices including...

2011-08-23

2011-08-23

Roman, Angel (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S399000, C438S597000, C438S637000, C438S669000, C438S672000, C257SE21495

Reexamination Certificate

active

08003514

ABSTRACT:
A method can include forming gate lines on a semiconductor substrate and forming a first interlayer dielectric layer for insulating the gate lines from each other. First and second contact plugs are formed on the semiconductor substrate and landing pads are formed on the first contact plugs and the first interlayer dielectric layer to overlap portions of the first contact plugs. Recessed contact plugs are formed to have recessed portions by etching the second contact plugs, to be located below an upper surface of the first interlayer dielectric layer, where a cross-sectional total distance between the landing pads and the recessed contact plugs increases due to the recessed portions.

REFERENCES:
patent: 5688713 (1997-11-01), Linliu et al.
patent: 6258649 (2001-07-01), Nakamura et al.
patent: 2001/0005624 (2001-06-01), Aoyagi et al.
patent: 2001/0041404 (2001-11-01), Uchiyama
patent: 2005/0001253 (2005-01-01), Sugimura
patent: 100155831 (1998-07-01), None
patent: 1020060113264 (2006-11-01), None
patent: 1020070112551 (2007-11-01), None

Affiliated with

Also associated with

Rating

Methods of fabricating semiconductor devices including... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of fabricating semiconductor devices including..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of fabricating semiconductor devices including... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2672142