Semiconductor device and method for manufacturing the same

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

C438S270000, C257S302000, C257SE27057

Reexamination Certificate

active

07915113

ABSTRACT:
A method for manufacturing a semiconductor device including a vertical cell transistor structure may include forming a vertical cell transistor structure over a semiconductor substrate of a cell region; forming an insulating film over the vertical cell transistor structure; planarizing the insulating film to expose a hard mask film disposed at a top portion of the vertical cell transistor structure; and forming a storage node contact by removing the hard mask film.

REFERENCES:
patent: 2006/0097304 (2006-05-01), Yoon et al.
patent: 2007/0152255 (2007-07-01), Seo et al.

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