Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2011-05-03

2011-05-03

Nguyen, Viet Q (Department: 2827)

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

C365S189160, C365S189110, C365S185200, C365S185230, C365S185180, C365S185030

Reexamination Certificate

active

07936617

ABSTRACT:
Provided is a nonvolatile semiconductor memory device which can enhance a stable control of a voltage applied to a memory cell and has excellent capability of controlling a drain voltage. The nonvolatile semiconductor memory device includes: a plurality of memory cells; a write buffer receiving data to be written to the plurality of memory cells; a count circuit searching data input to the write buffer and determining bit number of data to be simultaneously programmed to the plurality of memory cells; a write circuit supplying a write voltage to the plurality of memory cells according to the data; and a voltage regulator supplying a control voltage (Vpb) to the write circuit, wherein the voltage regulator includes a controller Counting write bit number and supplying the control voltage (Vpb) according to the counted write bit number.

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