Semiconductor device having silicon layer in a gate electrode

Details Semiconductor device having silicon layer in a gate electrode Semiconductor device having silicon layer in a gate electrode

2011-01-25

2011-01-25

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S532000, C257SE21197, C257SE21061

Reexamination Certificate

active

07875518

ABSTRACT:
A method for forming a semiconductor device includes, in order, consecutively depositing a gate insulating film and a silicon layer on a semiconductor substrate, implanting boron into the silicon layer, diffusing the boron by heat-treating the silicon layer, implanting phosphorous into the silicon layer, diffusing at least the phosphorous by heat-treating the silicon layer, and patterning the silicon layer by using a dry etching technique.

REFERENCES:
patent: 5021356 (1991-06-01), Henderson et al.
patent: 6194259 (2001-02-01), Nayak et al.
patent: 1214540 (1999-04-01), None
patent: 2001-210726 (2001-08-01), None
patent: 2003-31683 (2003-01-01), None
Japanese Office Action dated Mar. 27, 2009 with Partial English Translation.

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