Semiconductor device including an ohmic layer

Details Semiconductor device including an ohmic layer Semiconductor device including an ohmic layer

2011-01-25

2011-01-25

Smoot, Stephen W (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S757000, C257S770000, C257SE23157

Reexamination Certificate

active

07875939

ABSTRACT:
In an ohmic layer and methods of forming the ohmic layer, a gate structure including the ohmic layer and a metal wiring having the ohmic layer, the ohmic layer is formed using tungsten silicide that includes tungsten and silicon with an atomic ratio within a range of about 1:5 to about 1:15. The tungsten silicide may be obtained in a chamber using a reaction gas including a tungsten source gas and a silicon source gas by a partial pressure ratio within a range of about 1.0:25.0 to about 1.0:160.0. The reaction gas may have a partial pressure within a range of about 2.05 percent to about 30.0 percent of a total internal pressure of the chamber. When the ohmic layer is employed for a conductive structure, such as a gate structure or a metal wiring, the conductive structure may have a reduced resistance.

REFERENCES:
patent: 5030588 (1991-07-01), Hosaka
patent: 6037263 (2000-03-01), Chang
patent: 6306743 (2001-10-01), Lee
patent: 0 648 859 (1995-04-01), None
patent: 10-0214906 (1999-05-01), None
patent: 2001-80635 (2001-08-01), None
patent: 10-0351907 (2002-08-01), None
patent: 1020030048205 (2003-06-01), None
Korean Office Action dated Apr. 26, 2006.

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