Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-05-17
2011-05-17
Garber, Charles (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S296000, C438S528000, C438S529000, C438S774000, C257SE21660, C257SE21661, C257SE21646, C257SE21645
Reexamination Certificate
active
07943459
ABSTRACT:
A semiconductor device is provided with a conductor wire and a fuse wire formed in an insulating film over a semiconductor substrate, a first under-pad-wire insulating film formed above the insulating film, a second under-pad-wire insulating film formed on the first under-pad-wire insulating film, a pad wire formed in an area above the conductive wire, in the first and second under-pad-wire insulating films and an opening formed by leaving a part of the first under-pad-wire insulating film in an area above the fuse wire, in the first and second under-pad-wire insulating films, wherein the second under-pad-wire insulating film comprises an element different from that of the first under-pad-wire insulating film.
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Akiyama Kazutaka
Matsushita Takaya
Ahmadi Mohsen
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Garber Charles
Kabushiki Kaisha Toshiba
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