Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2011-04-12
2011-04-12
Quach, Tuan N. (Department: 2893)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S485000, C438S491000, C257SE21133
Reexamination Certificate
active
07923356
ABSTRACT:
Concerning an art related to a manufacturing method for a semiconductor device having an integrated circuit using thin film transistors on a substrate, a problem is to provide a condition for forming an amorphous silicon film having distortion. In the deposition of an amorphous silicon film using a sputter method, a condition is provided with a frequency of 15 to 25 kHz and a deposition power of 0.5 to 3 kW. This can sufficiently contain Ar at 10×1020/cm3or more in an amorphous silicon film, thus making possible to form an amorphous silicon film having distortion.
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Akimoto Kengo
Takayama Toru
Costellia Jeffrey L.
Nixon & Peabody LLP
Quach Tuan N.
Semiconductor Energy Laboratory Co,. Ltd.
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