Method of forming polycrystalline silicon thin film and...

Details Method of forming polycrystalline silicon thin film and... Method of forming polycrystalline silicon thin film and...

2011-07-26

2011-07-26

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S662000, C438S795000

Reexamination Certificate

active

07985665

ABSTRACT:
Provided is a method of forming a polycrystalline silicon thin film with improved electrical characteristics. The method includes forming an amorphous silicon thin film on a substrate, partially melting a portion of the amorphous silicon thin film by irradiating the portion of the amorphous silicon thin film with a laser beam having a low energy density, forming polycrystalline silicon grains with a predetermined crystalline arrangement by crystallizing the partially molten portion of the amorphous silicon thin film, completely melting a portion of the polycrystalline silicon grains and a portion of the amorphous silicon thin film by irradiation of a laser beam having a high energy density while repeatedly moving the substrate by a predetermined distance, and growing the polycrystalline silicon grains by crystallizing the completely molten silicon homogeneously with the predetermined crystalline arrangement.

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