Semiconductor devices and methods of fabricating the same

Details Semiconductor devices and methods of fabricating the same Semiconductor devices and methods of fabricating the same

2011-01-04

2011-01-04

Smith, Matthew S (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257S319000, C257SE29129, C257SE27103, C257SE21645, C438S259000, C438S270000, C438S279000

Reexamination Certificate

active

07863676

ABSTRACT:
A semiconductor device includes a device isolation layer in a semiconductor substrate, an active region defined by the device isolation layer, the active region including a main surface and a recess region including a bottom surface that is lower than the main surface, and a gate electrode formed over the recess region, wherein a top surface of the device isolation layer adjacent to the recess region is lower than the bottom surface of the recess region.

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