Integrated JFET and schottky diode

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S392000, C257S402000, C257SE27061

Reexamination Certificate

active

07928509

ABSTRACT:
The present invention discloses an integrated junction field effect transistor (JFET) and Schottky diode, comprising a depletion mode JFET which includes a source, a drain and a gate, wherein the drain is not provided with an ohmic contact such that it forms a Schottky diode.

REFERENCES:
patent: 6784489 (2004-08-01), Menegoli
patent: 7608907 (2009-10-01), Mallikarjunaswamy
patent: 2006/0145185 (2006-07-01), Mallikarjunaswamy
patent: 2007/0298559 (2007-12-01), Brar et al.

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