Method for structuring a substrate using a metal mask layer...

Details Method for structuring a substrate using a metal mask layer... Method for structuring a substrate using a metal mask layer...

2011-04-19

2011-04-19

Le, Thao X (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S408000, C438S441000, C257S762000, C257SE21010

Reexamination Certificate

active

07928011

ABSTRACT:
A method and intermediate product for structuring a substrate is disclosed. At least one seed layer including a first metal compound is positioned at least partially on the substrate. The seed layer is subjected to a solution comprising ions of a second metal compound. The ions are reduced in the solution by reduction means so that the second metal compound is deposited as mask layer on the seed layer.

REFERENCES:
patent: 2002/0084193 (2002-07-01), Merricks et al.
patent: 2004/0238927 (2004-12-01), Miyazawa
patent: 2006/0084264 (2006-04-01), Baskaran et al.
patent: 2006/0094226 (2006-05-01), Huang et al.
patent: 2006/0292846 (2006-12-01), Pinto et al.
patent: 2008/0160762 (2008-07-01), Feustel et al.
“International Technology Roadmap for Semiconductors: Lithography,” http://www.itrs.net/, ITRS 2005 Edition, 29 pages, ITRS.

Affiliated with

Also associated with

Rating

Method for structuring a substrate using a metal mask layer... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for structuring a substrate using a metal mask layer..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for structuring a substrate using a metal mask layer... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2650352