Semiconductor structure and method of forming the structure

Details Semiconductor structure and method of forming the structure Semiconductor structure and method of forming the structure

2011-04-26

2011-04-26

Louie, Wai-Sing (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S514000, C438S299000

Reexamination Certificate

active

07932144

ABSTRACT:
Disclosed are embodiments of an n-FET structure with silicon carbon S/D regions completely contained inside amorphization regions and with a carbon-free gate electrode. Containing carbon within the amorphization regions, ensures that all of the carbon is substitutional following re-crystallization to maximize the tensile stress imparted on channel region. The gate stack is capped during carbon implantation so the risk of carbon entering the gate stack and degrading the conductivity of the gate polysilicon and/or damaging the gate oxide is essentially eliminated. Thus, the carbon implant regions can be formed deeper. Deeper S/D carbon implants which are completely amorphized and then re-crystallized provide greater tensile stress on the n-FET channel region to further optimize electron mobility. Additionally, the gate electrode is uncapped during the n-type dopant process, so the n-type dopant dose in the gate electrode can be at least great as the dose in the S/D regions.

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