Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-06-07
2011-06-07
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S034000, C438S150000, C438S151000, C438S152000, C438S153000, C438S154000, C438S155000, C438S703000, C257SE27131, C257SE27132, C257SE27135, C257SE27152, C257SE33053, C257S059000, C257SE29003, C257SE21700, C257S768000, C349S114000, C349S049000, C349S139000
Reexamination Certificate
active
07955908
ABSTRACT:
A thin film transistor array panel is provided, which includes: a gate line, a gate insulating layer, and a semiconductor layer sequentially formed on a substrate; a data line and a drain electrode formed at least on the semiconductor layer; a first passivation layer formed on the data line and the drain electrode and having a first contact hole exposing the drain electrode at least in part; a second passivation layer formed on the first passivation layer and having a second contact hole that is disposed on the first contact hole and has a first bottom edge placed outside the first contact hole and a second bottom edge placed inside the first contact hole; and a pixel electrode formed on the second passivation layer and connected to the drain electrode through the first and the second contact holes.
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Kim Jang-Soo
Kim Kyung-Wook
Kim Sung-Man
Kong Hyang-Shik
Ryu Hye-Young
F. Chau & Associates LLC
Richards N Drew
Samsung Electronics Co,. Ltd.
Singal Ankush k
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