Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2011-01-18
2011-01-18
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S786000, C257SE21625, C427S255190, C427S255310
Reexamination Certificate
active
07871942
ABSTRACT:
Processes for making a high K (dielectric constant) film using an ultra-high purity hafnium containing organometallic compound are disclosed. Also described are devices incorporating high K films made with high purity hafnium containing organometallic compounds.
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Ahmed Khaled Z.
Kher Shreyas S.
Ma Yi
Narwankar Pravin K.
Applied Materials Inc.
Diehl Servilla LLC
Landau Matthew C
Nicely Joseph C
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