Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1998-04-06

2000-05-16

Yoo, Do Hyun

Static information storage and retrieval

Read/write circuit

Precharge

G11C 700

Patent

active

06064611&

ABSTRACT:
A semiconductor memory device includes memory cells, a bitline connected to the memory cells, a read circuit including a precharge circuit, and a first transistor connected between the bitline and the read circuit, wherein a first voltage is applied to a gate of the first transistor when the precharge circuit precharges the bitline, and a second voltage which is different from the first voltage is applied to the gate of the first transistor when the read circuit senses a change in a voltage of the bitline.

REFERENCES:
patent: 5570315 (1996-10-01), Tanaka et al.
patent: 5847992 (1998-12-01), Tanaka et al.
Tae-Sung Jung et al; "A3.3V 128Mb Multi-Level NAND Flash Memory for Mass Storage Applications," ISSCC Digest of Technical papers, pp 32-33, Feb. 1996.

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