Integrated circuit isolation system

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

C438S222000, C257S506000, C257S510000

Reexamination Certificate

active

07972921

ABSTRACT:
A method of manufacturing a self-aligned inverted T-shaped isolation structure. An integrated circuit isolation system including providing a substrate, forming a base insulator region in the substrate, growing the substrate to surround the base insulator region, and depositing an insulator column having a narrower width than the base insulator region on the base insulator region.

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patent: 2007/0099362 (2007-05-01), Chidambarrao et al.
patent: 2007/0246754 (2007-10-01), Sonsky et al.

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