Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-08-23
2011-08-23
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S396000, C257S303000, C257SE21648
Reexamination Certificate
active
08003462
ABSTRACT:
A first electrode film containing TiAlN and a main dielectric film containing tantalum oxide are formed over a semiconductor substrate. Anneal is performed in the state that the first electrode film and the main dielectric film are formed, to react aluminum (Al) in the first electrode film with oxygen (O) in the main dielectric film and form a subsidiary dielectric film containing aluminum oxide at an interface between the first electrode film and the main dielectric film. A second electrode film is formed facing the first electrode film via the main dielectric film and the subsidiary dielectric film.
REFERENCES:
patent: 6475854 (2002-11-01), Narwankar et al.
patent: 6485988 (2002-11-01), Ma et al.
patent: 2002-164506 (2002-06-01), None
patent: 2004-039728 (2004-02-01), None
Fujitsu Semiconductor Limited
Vu David
Westerman Hattori Daniels & Adrian LLP
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