Method of fabricating a memory cell

Details Method of fabricating a memory cell Method of fabricating a memory cell

2011-07-19

2011-07-19

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S757000

Reexamination Certificate

active

07981743

ABSTRACT:
The memory cell of the present invention has two independent storage regions embedded into two opposite sidewalls of the control gate respectively. In this way, the data storage can be more reliable. Other features of the present invention are that the thickness of the dielectric layers is different, and the two independent storage regions are formed on opposite bottom sides of the opening by the etching process and form a shape like a spacer. The advantage of the aforementioned method is that the fabricating process is simplified and the difficulty of self-alignment is reduced.

REFERENCES:
patent: 5923063 (1999-07-01), Liu et al.
patent: 6174753 (2001-01-01), Liao
patent: 6392267 (2002-05-01), Shrivastava et al.
patent: 2001/0034106 (2001-10-01), Moise et al.
patent: 2006/0113547 (2006-06-01), Shin

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