Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-05-03
2011-05-03
Nguyen, Thinh T (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S314000, C257SE29129, C365S185050
Reexamination Certificate
active
07936003
ABSTRACT:
A semiconductor device includes transistors with a vertical gate electrode. In a transistor structure, a semiconductor pattern has first and second sides facing in a transverse direction, and third and fourth sides facing in a longitudinal direction. Gate patterns are disposed adjacent to the first and second sides of the semiconductor pattern. Impurity patterns directly contact the third and fourth sides of the semiconductor pattern. A gate insulating pattern is interposed between the gate patterns and the semiconductor pattern.
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Han Jeong-Uk
Kang Sang-Woo
Kim Yong-Tae
Yoon Seung-Beom
F. Chau & Associates LLC
Nguyen Thinh T
Samsung Electronics Co,. Ltd.
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