Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-06-07
2011-06-07
Stark, Jarrett J (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S197000, C257S310000, C257S544000
Reexamination Certificate
active
07955926
ABSTRACT:
In one embodiment, the present invention provides a method of fabricating a semiconducting device that includes providing a substrate including at least one semiconducting region and at least one oxygen source region; forming an oxygen barrier material atop portions of an upper surface of the at least one oxygen region; forming a high-k gate dielectric on the substrate including the at least one semiconducting region, wherein oxygen barrier material separates the high-k gate dielectric from the at least one oxygen source material; and forming a gate conductor atop the high-k gate dielectric.
REFERENCES:
patent: 5479033 (1995-12-01), Baca et al.
patent: 6326251 (2001-12-01), Gardner et al.
patent: 6350661 (2002-02-01), Lim et al.
patent: 6617624 (2003-09-01), Powell
patent: 6649480 (2003-11-01), Fitzgerald et al.
patent: 6713808 (2004-03-01), Wang et al.
patent: 6881632 (2005-04-01), Fitzgerald et al.
patent: 7109079 (2006-09-01), Schaeffer et al.
patent: 7115959 (2006-10-01), Andreoni et al.
patent: 7173312 (2007-02-01), Cabral, Jr. et al.
patent: 7173320 (2007-02-01), Rahim
patent: 2006/0001161 (2006-01-01), Graettinger et al.
patent: 2006/0131675 (2006-06-01), Wang et al.
patent: 2006/0186491 (2006-08-01), Park et al.
patent: 2007/0152276 (2007-07-01), Arnold et al.
patent: 2007/0264837 (2007-11-01), Rachmady et al.
patent: 2008/0014730 (2008-01-01), Arghavani et al.
patent: 2010/0041221 (2010-02-01), Arnold et al.
H. Ishii, et al. Growth and Electrical Properties of Atomic-Layer Deposited ZrO2/Si-Nitride Stack Gate Dielectrics. Journal of Applied Physics, Jan. 15, 2004 pp. 536-542.
Search Report and Written Opinion of FIS920070375PCT, International Serial No. PCT/US09/037620.
A. Nakajima, et al. Atomic-Layer Deposition of ZrO2 with a Si Nitride Barrier Layer, Applied Physics Letters, Oct. 7, 2002, 81(15):2824-2826.
Conti Richard A.
Jha Rashmi
Mo Renee T.
Natzle Wesley C.
Schonenberg Kathryn T.
International Business Machines - Corporation
Schnurmann H. Daniel
Scully , Scott, Murphy & Presser, P.C.
Stark Jarrett J
Tobergte Nicholas
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