Method of manufacturing semiconductor device having...

Details Method of manufacturing semiconductor device having... Method of manufacturing semiconductor device having...

2011-05-10

2011-05-10

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21649

Reexamination Certificate

active

07939405

ABSTRACT:
A method of manufacturing a semiconductor device includes forming an inter-layer insulating film; arranging a plurality of grooves in a surface layer of the inter-layer insulating film; forming embedded insulating films which are embedded in the grooves; arranging a plurality of holes in the inter-layer insulating film and between the embedded insulating films, in a manner such that each hole between the embedded insulating films partially overlaps therewith; forming lower electrodes, each of which has a bottom and a side face, and covers the bottom and side faces of the corresponding hole; forming a capacitance insulating film which covers the lower electrodes; and forming an upper electrode which further covers the capacitance insulating film.

REFERENCES:
patent: 6399399 (2002-06-01), Yamamoto
patent: 6916738 (2005-07-01), Lee et al.
patent: 2003-297952 (2003-10-01), None
patent: 2005-032982 (2005-02-01), None

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