Image sensor array with conformal color filters

Details Image sensor array with conformal color filters Image sensor array with conformal color filters

2011-06-28

2011-06-28

Parker, Ken A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S292000, C257S440000, C257SE31121

Reexamination Certificate

active

07968923

ABSTRACT:
An image sensor pixel includes a photo-sensor region, a microlens, a first color filter layer, and a second color filter layer. The photo-sensor region is disposed within a semiconductor die. The microlens is disposed on the semiconductor die in optical alignment with the photo-sensor region. The first color filter layer is disposed between the photo-sensor region and the microlens. The second color filter layer is disposed on an opposite side of the microlens as the first color filter layer.

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Agranov, G., Berezin, V., and Tsai, R., “Crosstalk and Microlens Study in a Color CMOS Image Sensor,” IEEE Transactions on Electron Devices, vol. 50, No. 1, Jan. 2003, pp. 4-11.
Hsu, T. et al. “A High-Efficiency CMOS Image Sensor With Air Gap in situ MicroLens (AGML) Fabricated by 0.18-μm CMOS Technology,” IEEE Electron Device Letters, vol. 26, No. 9, Sep. 2005, pp. 634-636.

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