Semiconductor device structure with strain layer and method...

Details Semiconductor device structure with strain layer and method... Semiconductor device structure with strain layer and method...

2011-01-04

2011-01-04

Jackson, Jr., Jerome (Department: 2815)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

C257SE21102

Reexamination Certificate

active

07863152

ABSTRACT:
A semiconductor device with a strain layer and a method of fabricating the semiconductor device with a strain layer that can reduce a loading effect are provided. By arranging active dummies and gate dummies not to overlap each other, the area of active dummy on which a strain layer dummy will be formed can be secured, thereby reducing the loading effect.

REFERENCES:
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patent: 7569443 (2009-08-01), Kavalieros et al.
patent: 2002/0168802 (2002-11-01), Hsu et al.
patent: 2006/0228850 (2006-10-01), Tsai et al.
patent: 2001-0028838 (2001-04-01), None

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