Self-aligned insulating etchstop layer on a metal contact

Details Self-aligned insulating etchstop layer on a metal contact Self-aligned insulating etchstop layer on a metal contact

2011-02-15

2011-02-15

Smith, Matthew S (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S677000, C257SE21409

Reexamination Certificate

active

07888220

ABSTRACT:
A semiconductor device comprising a substrate having a transistor that includes a metal gate structure; a first oxide layer formed over the substrate; a silane layer formed on the first oxide layer; and a non-conductive metal oxide layer grown on the metal gate structure, wherein the silane layer inhibits nucleation and growth of the non-conductive metal oxide layer.

REFERENCES:
patent: 6639288 (2003-10-01), Kunikiyo
patent: 2005/0127461 (2005-06-01), Dey et al.
patent: 2008/0116481 (2008-05-01), Sharma et al.
patent: 2008/0197426 (2008-08-01), Okazaki

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