Method for manufacturing semicondcutor device

Details Method for manufacturing semicondcutor device Method for manufacturing semicondcutor device

2011-07-05

2011-07-05

Fahmy, Wael M (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S400000, C438S694000, C438S703000, C257S500000, C257SE21660, C257SE21678, C257SE21683, C257SE21691

Reexamination Certificate

active

07972929

ABSTRACT:
A method for manufacturing a semiconductor device includes forming an ONO layer in a memory region and forming several gate oxide layer patterns in a logic region, a nitride layer in the logic region can be used as a hard mask, enabling a reduction in the number of masks used. This results in improved manufacturing efficiency and reduced manufacturing costs of a SONOS semiconductor device.

REFERENCES:
patent: 6399443 (2002-06-01), Chwa et al.
patent: 7084035 (2006-08-01), Ueda
patent: 7635653 (2009-12-01), Hashimoto et al.
patent: 2003/0151109 (2003-08-01), Taniguchi et al.
patent: 2006/0099755 (2006-05-01), Mori
patent: 2007/0284645 (2007-12-01), Lee et al.

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