Semiconductor integrated circuit device

Electronic digital logic circuitry – Significant integrated structure – layout – or layout...

Reexamination Certificate

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Details

C326S033000, C326S120000, C257S348000, C257S402000

Reexamination Certificate

active

07906990

ABSTRACT:
The present invention provides a semiconductor integrated circuit device in which characteristics of an SOI transistor are effectively used to achieve higher speed, higher degree of integration, and also reduction in voltage and power consumption. The semiconductor integrated circuit device according to the present invention has a configuration in which a plurality of external power supply lines and body voltage control lines are alternately arranged in one direction so as to extend over the entire chip, which supply power and a body voltage to logic circuits, an analog circuit and memory circuits. A body voltage control type logic gate is fully applied in the logic circuit, whereas the body voltage control type logic gate is partially applied in the memory circuit.

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Kenichi Shimomura et al., “Body Seigyo Gijutsu o Saiyo shita 1V 46ns 16Mbit SOI-DRAM no Sekkei Gijutsu,” IEICE Technical Report, 1997, vol. 97, No. 56 (ICD97 20), pp. 31-36.
Kenichi Shimomura et al., “Body Seigyo Gijutsu o Saiyo shita 1V 46ns 16Mbit SOI-DRAM no Sekkei Gijutsu,” IEICE Technical Report, 1997, vol. 97, No. 56 (ICD97 20), pp. 31-36.

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