Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2011-08-09

2011-08-09

Sandvik, Benjamin P (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE27113, C257SE21535

Reexamination Certificate

active

07994000

ABSTRACT:
To provide a semiconductor device having a memory element, and which is manufactured by a simplified manufacturing process. A method of manufacturing a semiconductor device includes, forming a first insulating film to cover a first semiconductor film and a second semiconductor film; forming a first conductive film and a second conductive film over the first semiconductor film and the second semiconductor film, respectively, with the first insulating film interposed therebetween; forming a second insulating film to cover the first conductive film; forming a third conductive film selectively over the first conductive film which is formed over the first semiconductor film, with the second insulating film interposed therebetween, and doping the first semiconductor film with an impurity element with the third conductive film serving as a mask and doping the second semiconductor film with the impurity element through the second conductive film.

REFERENCES:
patent: 6410412 (2002-06-01), Taira et al.
patent: 6639244 (2003-10-01), Yamazaki et al.
patent: 2006/0267141 (2006-11-01), Saito
patent: 2007/0228449 (2007-10-01), Takano et al.
patent: 2007/0228452 (2007-10-01), Asami
patent: 2000-269512 (2000-09-01), None
patent: 2006-041265 (2006-02-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2630490