Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-08
2011-03-08
Dickey, Thomas L (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21705, C257SE21614, C438S212000
Reexamination Certificate
active
07902595
ABSTRACT:
In one embodiment of the present invention, a power IC device is disclosed containing a power MOS transistor with a low ON resistance and a surface channel MOS transistor with a high operation speed. There is also provided a method of manufacturing such a device. A chip has a surface of which the planar direction is not less than −8° and not more than +8° off a silicon crystal face. The p-channel trench power MOS transistor includes a trench formed vertically from the surface of the chip, a gate region in the trench, an inversion channel region on a side wall of the trench, a source region in a surface layer of the chip, and a drain region in a back surface layer of the chip. The surface channel MOS transistor has an inversion channel region fabricated so that an inversion channel current flows in a direction not less than −8° and not more than +8° off the silicon crystal direction.
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Adan Alberto O.
Kikuta Mitsuhiro
Ohmi Tadahiro
Teramoto Akinobu
Watanabe Takanori
Dickey Thomas L
Harness & Dickey & Pierce P.L.C.
National University Corporation Tohoku University
Sharp Kabushiki Kaisha
Yazaki -Corporation
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