Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-09
2011-08-09
Such, Matthew W (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21409, C257SE29255
Reexamination Certificate
active
07994591
ABSTRACT:
Disclosed are a semiconductor device and a method for manufacturing the same. The semiconductor device includes a gate structure which includes a silicon oxynitride (SiON) layer formed on a semiconductor substrate, a hafnium silicon oxynitride (HfSiON) layer formed on the silicon oxynitride (SiON) layer, a polysilicon layer formed on the hafnium silicon oxynitride (HfSiON) layer, and a silicide layer formed on the polysilicon layer, spacers at sidewalls of the gate structure, and source and drain regions at opposite sides of the gate structure.
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Dongbu Hi-Tek Co., Ltd.
Fortney Andrew D.
Harrison Monica D
Such Matthew W
The Law Offices of Andrew D. Fortney
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