Spin-dependent tunnelling cell and method of formation thereof

Details Spin-dependent tunnelling cell and method of formation thereof Spin-dependent tunnelling cell and method of formation thereof

2011-01-11

2011-01-11

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S240000, C257S295000, C257S298000, C257S326000, C257SE21663, C257SE27005, C257SE43004, C257SE43006

Reexamination Certificate

active

07867788

ABSTRACT:
A Spin-Dependent Tunnelling cell comprises a first barrier layer of a first material and a second barrier layer of a second material sandwiched between a first ferromagnetic layer and a second ferromagnetic layer. The first and second barrier layers are formed to a combined thicknesses so that a Tunnelling Magnetoresistance versus voltage characteristic of the cell has a maximum at a non-zero bias voltage.

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