Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-07-19
2011-07-19
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S224000, C438S227000, C438S275000, C438S527000, C257SE21427, C257SE21633
Reexamination Certificate
active
07981739
ABSTRACT:
A method of fabricating an LDMOS transistor and a conventional CMOS transistor together on a substrate. A P-body is implanted into a source region of the LDMOS transistor. A gate oxide for the conventional CMOS transistor is formed after implanting the P-body into the source region of the LDMOS transistor. A fixed thermal cycle associated with forming the gate oxide of the conventional CMOS transistor is not substantially affected by the implanting of the P-body into the source region of the LDMOS transistor.
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You Budong
Zuniga Marco A.
Fish & Richardson P.C.
Parker John M
Smith Matthew
Volterra Semiconductor Corporation
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