Purge step-controlled sequence of processing semiconductor...

Details Purge step-controlled sequence of processing semiconductor... Purge step-controlled sequence of processing semiconductor...

2011-07-05

2011-07-05

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S492000, C438S493000, C427S255500, C118S719000, C257SE21170, C257SE21171, C257SE21585

Reexamination Certificate

active

07972961

ABSTRACT:
A method of processing semiconductor substrates includes: depositing a film on a substrate in a reaction chamber; evacuating the reaction chamber without purging the reaction chamber; opening a gate valve and replacing the substrate with a next substrate via the transfer chamber wherein the pressure of the transfer chamber is controlled to be higher than that of the reaction chamber before and while the gate valve is opened; repeating the above steps and removing the substrate from the reaction chamber; and purging and evacuating the reaction chamber, and cleaning the reaction chamber with a cleaning gas.

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European Office Action issued May 4, 2007 in counterpart European Patent Application No. 03 731 267.8.
Japanese Office Action issued Mar. 25, 2009 in counterpart Japanese Patent Application No. 2004-508393.

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