Semiconductor device manufacturing method, semiconductor...

Details Semiconductor device manufacturing method, semiconductor... Semiconductor device manufacturing method, semiconductor...

2011-03-22

2011-03-22

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S763000, C438S776000, C257SE29003, C257S126000

Reexamination Certificate

active

07910493

ABSTRACT:
A nitrided region is formed on a surface of a polysilicon layer by a nitriding treatment wherein plasma of a processing gas is generated by introducing microwaves into a processing chamber by a planar antenna having a plurality of slots. Then, a CVD oxide film or the like is formed on the nitrided region and after patterning the polysilicon layer and the like after the prescribed shape, and then, a thermal oxide film is formed by thermal oxidation on exposed side walls and the like of the polysilicon layer by having the nitrided region as an oxidation barrier layer. Thus, generation of bird's beak can be suppressed in the process at a temperature lower than the temperature in a conventional process.

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