Semiconductor having optimized insulation structure and...

Details Semiconductor having optimized insulation structure and... Semiconductor having optimized insulation structure and...

2011-01-25

2011-01-25

Smith, Matthew S (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C257SE21339

Reexamination Certificate

active

07875560

ABSTRACT:
A semiconductor having an optimized insulation structure which is simple and inexpensive to produce and can be made smaller than LOCOS insulation structures is disclosed. An implantation mask on a surface of a semiconductor substrate is used to implant elements into the semiconductor substrate, which elements, on thermal activation, form an insulation region together with the further elements of the semiconductor substrate. The thermal activation is effected by means of laser irradiation, during which the semiconductor substrate is briefly melted and then recrystallizes during the subsequent cooling, so that the implanted elements form the insulation region together with the further elements of the semiconductor substrate.

REFERENCES:
patent: 3936322 (1976-02-01), Blum et al.
patent: 4968636 (1990-11-01), Sugawara
patent: 4997786 (1991-03-01), Kubota et al.
patent: 5344787 (1994-09-01), Nagalingam et al.
patent: 5629217 (1997-05-01), Miwa et al.
patent: 5885904 (1999-03-01), Mehta et al.
patent: 5904575 (1999-05-01), Ishida et al.
patent: 5981318 (1999-11-01), Blanchard
patent: 5994190 (1999-11-01), Hashimoto
patent: 6110845 (2000-08-01), Seguchi et al.
patent: 6127242 (2000-10-01), Batra et al.
patent: 6261876 (2001-07-01), Crowder et al.
patent: 6635559 (2003-10-01), Greenwald et al.
patent: 7041575 (2006-05-01), Forbes
patent: 7115463 (2006-10-01), Sadana et al.
patent: 2001/0034086 (2001-10-01), Crowder et al.
patent: 2003/0042501 (2003-03-01), Greenwald et al.
patent: 2003/0127692 (2003-07-01), Kendall
patent: 2004/0082132 (2004-04-01), Comard
patent: 2006/0006376 (2006-01-01), Kendall et al.
patent: 2006/0038206 (2006-02-01), Shimoyama et al.
patent: 2006/0040476 (2006-02-01), Sadana et al.
patent: 2006/0115965 (2006-06-01), Abraham
patent: 2006/0183330 (2006-08-01), Abraham et al.
patent: 2006/0276040 (2006-12-01), Abraham
patent: 2007/0269957 (2007-11-01), Cha et al.
patent: 2008/0023795 (2008-01-01), Yamazaki et al.
patent: 102005038152 (2006-03-01), None

Affiliated with

Also associated with

Rating

Semiconductor having optimized insulation structure and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor having optimized insulation structure and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor having optimized insulation structure and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2621388