Method of manufacturing semiconductor device having of...

Details Method of manufacturing semiconductor device having of... Method of manufacturing semiconductor device having of...

2011-05-03

2011-05-03

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000, C438S229000, C438S231000, C438S788000, C257SE29266

Reexamination Certificate

active

07935592

ABSTRACT:
In a case of using a silicon nitride film as an offset spacer for forming an extension region of a transistor, an oxide protective surface is formed by oxygen plasma processing on the surface of the silicon nitride film.

REFERENCES:
patent: 7060559 (2006-06-01), Ozawa et al.
patent: 7378305 (2008-05-01), Hatada et al.
patent: 7410859 (2008-08-01), Peidous et al.
patent: 2005/0048753 (2005-03-01), Schwan
patent: 2006/0024872 (2006-02-01), Goodlin et al.
patent: 2007/0026599 (2007-02-01), Peidous et al.
patent: 2007/0072380 (2007-03-01), Wirbeleit et al.
patent: 2008/0164530 (2008-07-01), Wang et al.
patent: 2008/0258175 (2008-10-01), Peidous et al.
patent: 2008/0283926 (2008-11-01), Sridhar
patent: 2000-216373 (2000-08-01), None
patent: 2001-250944 (2001-09-01), None

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