Method of forming junction of semiconductor device

Details Method of forming junction of semiconductor device Method of forming junction of semiconductor device

2011-07-19

2011-07-19

Kebede, Brook (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21425

Reexamination Certificate

active

07981752

ABSTRACT:
The present invention relates to a method of forming junctions of a semiconductor device. According to the method of forming junctions of a semiconductor device in accordance with an aspect of the present invention, there is provided a semiconductor substrate in which a transistor including the junctions are formed. A first thermal treatment process for forming a passivation layer over the semiconductor substrate including the junctions is performed. Here, the passivation layer functions to prevent impurities within the junctions from being drained. A pre-metal dielectric layer is formed over the semiconductor substrate including the passivation layer.

REFERENCES:
patent: 6569728 (2003-05-01), Lee et al.
patent: 2006/0154411 (2006-07-01), Bu et al.
patent: 1020040007024 (2004-01-01), None
patent: 1020050002316 (2005-01-01), None
patent: 461024 (2001-10-01), None
Downey et al., Dose-rate effects on the formation of ultra-shallow junction with low-energy B+ and BF2+ ion implants, Thin Solid Films, vol. 308-309, pp. 562-569, (1997).

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