Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-02-24
2000-05-16
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257421, 257422, 257426, 257427, 438 48, H01L 2982, H01L 4300
Patent
active
060640839
ABSTRACT:
A hybrid memory device combines a ferromagnetic layer and a Hall Effect device. The ferromagnetic layer is magnetically coupled to a portion of a Hall plate, and when such plate is appropriately biased, a Hall Effect signal can be generated whose value is directly related to the magnetization state of the ferromagnetic layer. The magnetization state of the ferromagnetic layer can be set to correspond to different values of a data item to be stored in the hybrid memory device. The magnetization state is non-volatile, and a write circuit can be coupled to the ferromagnetic layer to reset or change the magnetization state to a different value. The memory device can also be fabricated to include an associated transistor (or other suitable switch) that functions as an isolation element to reduce cross-talk and as a selector for the output of the device when such is used in a memory array. This latter arrangement also permits a bias supply to be applied to each cell in the array, increasing the output signal level, and the signal to noise ratio. A high resistance element such as a resistor or diode can also be used as the isolation element depending on the particular application. In a preferred embodiment, the hybrid memory device and associated selector are combined and integrally fabricated using conventional semiconductor processing techniques to increase the integration density of memory arrays using such devices.
REFERENCES:
patent: 3577134 (1971-05-01), Bergman
patent: 3582561 (1971-06-01), Dempsey et al.
patent: 3860965 (1975-01-01), Voegeli
patent: 4314349 (1982-02-01), Batcher
patent: 4587636 (1986-05-01), Cosimini et al.
patent: 4607271 (1986-08-01), Popovic et al.
patent: 4754219 (1988-06-01), Milkovic
patent: 4896296 (1990-01-01), Turner et al.
patent: 4905178 (1990-02-01), Mor et al.
patent: 5089991 (1992-02-01), Matthews
patent: 5237529 (1993-08-01), Spitzer
patent: 5239504 (1993-08-01), Brady et al.
patent: 5245226 (1993-09-01), Hood et al.
patent: 5245227 (1993-09-01), Furtek et al.
patent: 5251170 (1993-10-01), Daughton et al.
patent: 5289410 (1994-02-01), Katti et al.
patent: 5329480 (1994-07-01), Wu et al.
patent: 5389566 (1995-02-01), Lage
patent: 5396455 (1995-03-01), Brady et al.
patent: 5420819 (1995-05-01), Pohm
patent: 5424236 (1995-06-01), Daughton et al.
patent: 5432373 (1995-07-01), Johnson
patent: 5452163 (1995-09-01), Coffey et al.
patent: 5475277 (1995-12-01), Johnson
patent: 5488250 (1996-01-01), Hennig
patent: 5491338 (1996-02-01), Spitzer
patent: 5565695 (1996-10-01), Johnson
patent: 5580814 (1996-12-01), Larson
patent: 5594366 (1997-01-01), Khong et al.
patent: 5621338 (1997-04-01), Liu et al.
patent: 5629549 (1997-05-01), Johnson
patent: 5652875 (1997-07-01), Taylor
patent: 5825595 (1998-10-01), Gill
James Daughton, "Magnetoresistive Memory Technology", Thin Solid Films, vol. 216, 162 (1992).
R. Meservey, P. M. Tedrow and P. Fulde, Phys. Rev. Lett. 25, 1270 (1970).
P.M. Tedrow and R. Meservey, Phys. Rev. Lett. 26, 192 (1971).
P.M. Tedrow and R. Meservey, Phys. Rev. B 7, 318 (1973).
Mark Johnson and R. H. Silsbee, Phys. Rev. Lett. 55, 1790 (1985).
Mark Johnson and R. H. Silsbee Phys. Rev. B 35, 4959 (1987).
Mark Johnson and R. H. Silsbee, Phys. Rev. B 37, 5312 (1988).
Mark Johnson and R. H. Silsbee, Phys. Rev. B 37, 5326 (1988).
Mark Johnson, "The All Metal Spin Transistor," I.E.E.E. Spectrum Magazine, vol. 31 No. 5 p. 47 (1994).
Mark Johnson, "The Bipolar Spin Switch," Science 260, 320 (1993).
R. S. Popovi'c, "Hall-effect Devices," Sens. Actuators 17, 39 (1989).
J. De Boeck, J. Harbison et al., "Non-volatile Memory Characteristics of Submicrometer Hall Structures Fabricated in Epitaxial Ferromagnetic MnAl Films on GaAs", Electronics Letters 29, 421 (1993).
Paul Horowitz and Winfield Hill, "The Art of Electronics," Cambridge Univ. Press, Cambridge U.K. (1980); see p. 328.
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