Semiconductor device

Details Semiconductor device Semiconductor device

1990-10-19

1991-10-08

Wojciechowicz, Edward J.

357 236, 357 47, 357 55, 357 68, H01L 2702

Patent

active

050559052

ABSTRACT:
A semiconductor device with a capacitive element of an MIS structure comprising an electrode lead segment and an MIS segment in which an electrode is formed through a dielectric layer on an impurity region over to an aperture in a field insulator film. A high-concentration impurity region which connects the impurity region of the MIS segment to the electrode lead region of the electrode lead segment is formed only in the junction between the impurity region and the electrode lead region. The parasitic capacitance between the capacitive element and the semiconductor substrate is reduced without increasing the parasitic resistance so as to consequently achieve high precision in forming the capacitive element.

REFERENCES:
patent: 4686557 (1987-08-01), Mahrla
patent: 4805071 (1989-02-01), Hutter et al.
patent: 4887135 (1989-12-01), Cheney et al.
patent: 4933739 (1990-06-01), Harari
Electronics Apr. 16, 1987; 60 No. 8, pp. 69-71.

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