Method of forming a high-precision linear MOS capacitor using co

Details Method of forming a high-precision linear MOS capacitor using co Method of forming a high-precision linear MOS capacitor using co

1997-09-04

2000-05-16

Wilczewski, Mary

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438251, 438252, 438393, 438395, H01L 2704, H01L 218234

Patent

active

060636599

ABSTRACT:
A high-precision, linear MOS-transistor-gate capacitor device is provided by applying a source/drain high-energy, high-dose ion implantation through implant windows in a polysilicon top plate of the capacitor. The ion implantation may be a step of generic MOS source/drain process flow.

REFERENCES:
patent: 4125933 (1978-11-01), Baldwin
patent: 4427457 (1984-01-01), Carlson

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