Method of forming a buried strap in a DRAM

Details Method of forming a buried strap in a DRAM Method of forming a buried strap in a DRAM

1999-02-22

2000-05-16

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438243, 438386, H01L 218242

Patent

active

060636572

ABSTRACT:
A method and structure for forming a buried strap in a dynamic random access memory structure. The method includes forming a trench adjacent a pass transistor of the dynamic random access memory structure, partially filling the trench with a conductor, forming a collar surrounding an upper portion of the conductor, forming a spacer in a portion of the trench above the conductor, forming an insulator in a remainder of the upper portion of the trench, forming a shallow trench isolation region on one side of the trench opposite the pass transistor, removing the spacer to form a gap between the insulator and the pass transistor, and filling the gap with a conductor to form the buried strap.

REFERENCES:
patent: 5049518 (1991-09-01), Fuse et al.
patent: 5360758 (1994-11-01), Bronner et al.
patent: 5525531 (1996-06-01), Bronner et al.
patent: 5960297 (1999-09-01), Saki

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