Electric heating – Metal heating – By arc
Reexamination Certificate
2000-03-22
2001-10-23
Paschall, Mark (Department: 3742)
Electric heating
Metal heating
By arc
C219S121590, C219S121430, C204S298310, C430S329000, C438S725000
Reexamination Certificate
active
06307174
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to an etching method. More particularly, the present invention relates to a method for high-density plasma etching.
2. Description of the Related Art
In the device patterning process, to enhance the photosensitivity contrast, amine compounds are often added into a photo-resist layer. While performing the conventional etching process using a high density plasma (HDP) oxide etcher, a high intensity ultraviolet (UV) radiation is generated. It is found that the amine compounds from the photo-resist materials would be decomposed under the high-intensity UV radiation and produce nitrogen gas. Resist bubblings are thus occurred in the photo-resist layer by the diffusion of the nitrogen gas. Being obstructed by a barrier layer formed on the photo-resist layer, the bubbles of the nitrogen gas are further retained in the photo-resist layer instead of sweating out. After accumulated a certain concentration or pressure to certain, a pressure burst is easily caused.
SUMMARY OF THE INVENTION
Accordingly, the invention provides a method for high-density plasma etching. A substrate is provided. A material layer is formed on the substrate. A patterned photo-resist layer is formed on the oxide layer. The material layer is patterned by the high-density plasma etching, simultaneously, a formation of a barrier layer over the substrate Ninth the patterning process is suppressed and nitrogen gas generated in the patterned photo-resist layer is reduced. Adjustments of high-density plasma etching process parameters are made to reduce the intensity of the induced UV radiation, the amount of the nitrogen gas, so as to suppress the bubbling effect. The parameters includes an operation pressure, a flow rate of carbon monoxide, a flow rate of an argon gas, a flow rate of octafluorocyclobutane (C
4
F
8
), a supplied power, and a process temperature.
Moreover, by adjusting the above parameters, the barrier layer formed on the photo-resist layer dog etching process becomes thinner and easier to release trapped nitrogen gas. Even nitrogen gas is produced, the bubbles can be avoided with less obstruction by the thinner barrier layer.
It is to be understood that both the foregoing general description and the following detailed description are exemplary, and are intended to provide further explanation of the invention as claimed.
REFERENCES:
patent: 5773201 (1998-06-01), Fujimura et al.
patent: 5824604 (1998-10-01), Bar-Gadda
Chen Tong-Yu
Huang Michael W C
Yang Chan-Lon
Huang Jiawei
J. C. Patents
Paschall Mark
United Microelectronics Corp.
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