Semiconductor integrated circuit

Details Semiconductor integrated circuit Semiconductor integrated circuit

1992-09-09

1994-04-19

LaRoche, Eugene R.

Static information storage and retrieval

Read/write circuit

Having particular data buffer or latch

365 49, 365154, 365190, G11C 1504

Patent

active

053052625

ABSTRACT:
A semiconductor integrated circuit has a CAM structure based on nonvolatile memories which is used for forming a flexible CAM of large scale integration. The circuit includes a first memory cell for defining the electrical connection or the nonconnection between a first data line and a match line, a second memory cell for defining the electrical nonconnection or the connection between a second data line and the match line, and a selective transistor for making or breaking the connection between each of the first and the second data lines and the match line. The threshold voltage of the selective transistor has a predetermined value incorporated during the fabrication process. The semiconductor integrated circuit can electrically connect a selective word line connected to a gate electrode of the selective transistor to the match line and has a tri-state buffer for making the potential of the selective word line float. The threshold voltage of each nonvolatile memory is set at a predetermined voltage. The semiconductor integrated circuit is capable of retrieving data from a plurality of memory cells at high speed without mutual interference and is able to provide an associative memory unit for use as a high-speed, large capacity data base.

REFERENCES:
patent: 3701980 (1972-10-01), Mundy
patent: 5051949 (1991-09-01), Young
patent: 5111427 (1992-05-01), Kobayashi et al.
patent: 5126968 (1992-06-01), Hamamoto et al.
IEEE Journal of Solid-State Circuit, vol. SL-8, No. 5 Oct. 1973 Gunnar Carlstedt.
"Design of CMOS VLSI", pp. 167-169 and 176-177, edited by Tetsuya Iizuka and Supervised by Takuo Sugano, Baifukan, 1989.

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