Semiconductor device, manufacturing method, and system

Details Semiconductor device, manufacturing method, and system Semiconductor device, manufacturing method, and system

Filed on

1998-06-12

Date issued

2001-03-20

Examiner

Niebling, John F. (Department: 2812)

Patent Class

Semiconductor device manufacturing: process

SubClass

Coating of substrate containing semiconductor region or of...

SubSubClass

Multiple layers

Other Related Categories

C438S061000, C438S485000, C438S907000, C427S585000

Type

Reexamination Certificate

Status

active

Patent number

06204197

Description

ABSTRACT:

BACKGROUND OF THE INVENTION
This invention relates to a semiconductor device manufacturing method and system, and more particularly, to a semiconductor manufacturing process with a multi-chamber system.
There has been known a plasma CVD system in which reactant gas is activated by glow discharge alone. The known process is considered advantageous compared with conventional thermal CVD systems in that a deposition process can be carried out at a relatively low temperature. Further, the deposited layer thus formed contains hydrogen or halogen as a recombination neutralizer, which can impart an improved p-n, n-i or p-i junction to the layer.
Such a glow discharge CVD system, however, has only a very low deposition speed which is required to be increased by a factor of 10 to 500 for commercial applicability.
On the other hand, a CVD system enhanced by ECR is also known in which a deposition process is carried out at a pressure lower than 1×10
−2
torr, e.g., 1×10
−2
to 1×10
−5
torr. According to this method and system, a 5000 A to 10 microns thick layer can be deposited at a rate of 10 to 100 A/sec. However, when a plurality of layers are desired to be deposited, it requires a substantially longer time.
SUMMARY OF THE INVENTION
It is therefore an object of the invention to provide a semiconductor manufacturing method and system capable of producing a semiconductor device with a high quality junction.
It is therefore another object of the invention to provide a semiconductor manufacturing method and system capable of yielding large throughput.
It is therefore a further object of the invention to provide a semiconductor manufacturing method and system with a short processing time.


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