Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-06-09
1999-05-11
Whitehead, Jr., Carl
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257358, 257360, 257356, H01L23/62
Patent
active
059030305
ABSTRACT:
A semiconductor device provided with an ESD circuit including an active region defined on a semiconductor substrate, the active region having a plurality of uniformly spaced protrusions extending from upper and lower ends thereof, a plurality of contact regions defined on the semiconductor substrate within each protrusion of the active region, and a plurality of uniformly spaced gates formed on the semiconductor substrate in portions of the active region except for the protrusions while extending in the same directions, respectively, each gate being arranged between adjacent protrusions while being spaced from the protrusions. It is possible to obtain a maximum space between the contact regions and associated gates overlapping the active region by forming protrusions extending from the upper and lower ends of the active region and forming the contact regions on the protrusions. Accordingly, the area of the active region is greatly reduced.
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patent: 5365103 (1994-11-01), Brown et al.
patent: 5378906 (1995-01-01), Lee
patent: 5451799 (1995-09-01), Kurimoto et al.
patent: 5623156 (1997-04-01), Watt
patent: 5789791 (1998-08-01), Bergemont
Hyundai Electronics Industries Co,. Ltd.
Jr. Carl Whitehead
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